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      首頁> 外文OA文獻(xiàn) >Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime
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      Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

      機(jī)譯:應(yīng)變結(jié)晶器中載流子傳輸特性的表征 ??si壁狀結(jié)構(gòu)作為縮放成準(zhǔn)量子的函數(shù) ??政權(quán)

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      摘要

      We report the transport characteristics of both electrons and holes throughnarrow constricted crystalline Si "wall-like" long-channels that weresurrounded by a thermally grown SiO2 layer. Importantly, as a result of theexistence of fixed oxide charges in the thermally grown SiO2 layer and theSi/SiO2 interface, the effective Si cross-sectional wall widths wereconsiderably narrower than the actual physical widths, due the formation ofdepletion regions from both sides. These nanostructures were configured into ametal-semiconductor-metal device configuration that was isolated from thesubstrate region. Dark currents, dc-photo-response, and carrier"time-of-flight" response measurements using a mode-locked femtosecond laser,were used in the study. In the narrowest wall devices, a considerable increasein conductivity was observed as a result of higher carrier mobilities due tolateral constriction and strain. The strain effects, which include the reversalsplitting of light- and heavy- hole bands as well as the decrease ofconduction-band effective mass by reduced Si bandgap energy, are formulated inour microscopic model for explaining the experimentally observed enhancementsin both conduction- and valence-band mobilities with reduced Si wall thickness.The role of the biaxial strain buffing depth is elucidated and thequasi-quantum effect for the saturation hole mobility at small wall thicknessis also found and explained. Specifically, the enhancements of the valence-bandand conduction-band mobilities are found to be associated with differentaspects of theoretical model.
      機(jī)譯:我們報(bào)告了電子和空穴的傳輸特性,它們都被熱生長的SiO2層所包圍的狹窄的狹窄的晶體硅“壁狀”長通道所包圍。重要的是,由于在熱生長的SiO 2層和Si / SiO 2界面中存在固定的氧化物電荷,有效的Si橫截面壁寬度比實(shí)際的物理寬度窄得多,這是由于從兩側(cè)形成了耗盡區(qū)。這些納米結(jié)構(gòu)被配置成與襯底區(qū)域隔離的金屬-半導(dǎo)體-金屬器件結(jié)構(gòu)。在這項(xiàng)研究中使用了暗電流,直流光響應(yīng)和使用鎖模飛秒激光器的載波“飛行時(shí)間”響應(yīng)測(cè)量。在最窄的壁裝置中,由于側(cè)向收縮和應(yīng)變導(dǎo)致較高的載流子遷移率,導(dǎo)致電導(dǎo)率顯著增加。我們?cè)谖⒂^模型中建立了應(yīng)變效應(yīng),包括輕空穴帶和重空穴帶的反向分裂,以及由于硅帶隙能量的減小而導(dǎo)致的導(dǎo)帶有效質(zhì)量的降低,以解釋實(shí)驗(yàn)觀察到的導(dǎo)帶和價(jià)帶的增強(qiáng)闡明了雙軸應(yīng)變拋光深度的作用,并發(fā)現(xiàn)并解釋了在小壁厚情況下飽和空穴遷移率的準(zhǔn)量子效應(yīng)。具體地說,價(jià)帶和導(dǎo)帶遷移率的提高與理論模型的不同方面有關(guān)。

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